A. Farokhnejad, M. Schwarz, M. Graef, F. Horst, B. Iñíguez, F. Lime, A. Kloes
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引用次数: 2
Abstract
The influence of Schottky barriers at NiSi2 contacts of Si Planar p-TFETs on Ultrathin Body [1] is analyzed in terms of deviations between measurements, TCAD simulations and a proposed compact model for the intrinsic capacitances in TFETs presented in [2]. A theory for the reason of the deviations for the intrinsic capacitances is evolved and discussed. Additionally, TCAD simulations are performed to support the theory.
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