{"title":"Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes","authors":"H. Gottlob, M. Schmidt, H. Kurz","doi":"10.1109/ICSCS.2009.5412232","DOIUrl":null,"url":null,"abstract":"In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd2O3 and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSCS.2009.5412232","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd2O3 and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.
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