N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson
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Abstract
We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of destructive single-event effects (SEE) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors. We include a discussion of a conservative safe operating area (SOA) specification for both devices.
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