Characterization and Modeling of Advanced Placement Algorithms for NAND Flash Arrays

Abstract

This work aims at providing an accurate and flexible tool to simulate the most advanced placement algorithms for state-of-the-art NAND Flash devices. A model for incremental step pulse programming is discussed and experimentally validated, showing its capability to describe the dependence on the program pulse duration/amplitude and to correctly reproduce the proximity effect and the selective slow program convergence behavior, when a bit line/channel bias is applied. Finally, when the entire memory array is simulated in a Monte Carlo fashion, the placement of our decananometer 3bit/cell device can be accurately reproduced, including the behavior of the advanced programming features.