A 5–15 GHz stacked I/Q modulator with 15–19 dBm OP1dB and 26–30 dBm OIP3 in 45 nm SOI CMOS

Abstract

In this paper, a 5–15 GHz I/Q modulator implemented in 45 nm SOI CMOS is presented, which shares DC current through biasing branch, I/Q mixers and stacked-FET power amplifier (PA) to provide high output power and linearity. Stacked SOI transistors are used to isolate the modulator from high voltage swing at the load and mitigate device break-down. The proposed architecture results in an OP1db and OIP3 of 15.6–19.5 dBm and 26–30 dBm at 5–15 GHz, respectively. The circuit occupies only 0.46 rnrn2 including pads. Application areas are in the 5G high-linearity IF circuity for high data-rate modulations.