A wideband CMOS VCO for zero-IF GSM-CDMA single-chip transceiver

Kostas Manetakis, D. Jessie, C. Narathong
{"title":"A wideband CMOS VCO for zero-IF GSM-CDMA single-chip transceiver","authors":"Kostas Manetakis, D. Jessie, C. Narathong","doi":"10.1109/ESSCIR.2004.1356637","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power CMOS VCO in a 0.35 /spl mu/m process which achieves a tuning range of 2.47 GHz-3.47 GHz and phase noise performance of -145dBc/Hz at 3 MHz offset (from a 1.8 GHz carrier). 5-bit digital coarse-tuning and accumulation-type MOS varactors allow for a 33% tuning range, which is required to cover the LO frequency range of a zero-IF GSM-CDMA transceiver and to account for process and temperature variations. Optimum design techniques ensure low VCO gain (<104 MHz/V) for good interoperability with the frequency synthesizer. An integrated regulator provides low supply pushing (40 kHz/V) and reduces the AM-to-PM sensitivity from the supply.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"147 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This paper presents a low-power CMOS VCO in a 0.35 /spl mu/m process which achieves a tuning range of 2.47 GHz-3.47 GHz and phase noise performance of -145dBc/Hz at 3 MHz offset (from a 1.8 GHz carrier). 5-bit digital coarse-tuning and accumulation-type MOS varactors allow for a 33% tuning range, which is required to cover the LO frequency range of a zero-IF GSM-CDMA transceiver and to account for process and temperature variations. Optimum design techniques ensure low VCO gain (<104 MHz/V) for good interoperability with the frequency synthesizer. An integrated regulator provides low supply pushing (40 kHz/V) and reduces the AM-to-PM sensitivity from the supply.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于零中频GSM-CDMA单片机收发器的宽带CMOS压控振荡器
本文提出了一种0.35 /spl mu/m工艺的低功耗CMOS压控振荡器,其调谐范围为2.47 GHz-3.47 GHz,相位噪声性能为-145dBc/Hz,偏移量为3 MHz(来自1.8 GHz载波)。5位数字粗调谐和累加型MOS变容管允许33%的调谐范围,这需要覆盖零中频GSM-CDMA收发器的LO频率范围,并考虑到工艺和温度变化。最佳设计技术确保低VCO增益(<104 MHz/V),与频率合成器具有良好的互操作性。集成稳压器提供低电源推力(40 kHz/V),并降低电源的am - pm灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Charge recycling sense amplifier based logic: securing low power security ICs against DPA [differential power analysis] 1.5 GHz OPAMP in 120nm digital CMOS Digital delay locked loop with open-loop digital duty cycle corrector for 1.2Gb/s/pin double data rate SDRAM A 14-V high speed driver in 5-V-only 0.35-/spl mu/m standard CMOS A low-swing single-ended L1 cache bus technique for sub-90nm technologies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1