Characterization of ion implanted silicon using UV Raman and multiwavelength photoluminescence for in-line dopant activation monitoring

Abstract

Ultra-violet (UV) Raman and multiwavelength photoluminescence (PL) characterization techniques are examined as potential in-line, non-contact dopant activation and diffusion process monitoring techniques for ion implanted silicon in implant activation process steps. Excellent correlations among sheet resistance (Rs), B depth profiles, UV Raman and multiwavelength PL characterization results were achieved. The UV Raman and multiwavelength PL technologies can be used as promising non-contact dopant activation and diffusion process monitoring techniques.