M. Rogalla, J. W. Chen, R. Geppert, R. Göppert, M. Kienzle, R. Irsigler, J. Ludwig, K. Runge, D. G. Ebling, T. Schmid, X. Liu, J. Kruger, Eicke R. Weber
{"title":"Influence of the compensation in semi-insulating GaAs on the particle detector performance","authors":"M. Rogalla, J. W. Chen, R. Geppert, R. Göppert, M. Kienzle, R. Irsigler, J. Ludwig, K. Runge, D. G. Ebling, T. Schmid, X. Liu, J. Kruger, Eicke R. Weber","doi":"10.1109/SIM.1996.571119","DOIUrl":null,"url":null,"abstract":"GaAs Schottky diodes made by commercial undoped semi-insulating (SI) material have been shown to work well as radiation detectors. This material offers high radiation resistance together with high charge carrier mobility, good signal-to-noise ratio and a good detection efficiency for minimum ionizing particles. To optimise the detector performance of Schottky diodes made on SI-GaAs, the influence of the compensation on the formation of the space charge region and charge collection efficiency (CCE) for alpha particles was studied. A strong dependence of the CCE on the ionized state of the arsenic antisite defect As/sub Ga//sup +/ and the resistivity determined from the Norde plot was observed. Also the influence of the compensation on the Schottky barrier height and space charge density can been seen.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
GaAs Schottky diodes made by commercial undoped semi-insulating (SI) material have been shown to work well as radiation detectors. This material offers high radiation resistance together with high charge carrier mobility, good signal-to-noise ratio and a good detection efficiency for minimum ionizing particles. To optimise the detector performance of Schottky diodes made on SI-GaAs, the influence of the compensation on the formation of the space charge region and charge collection efficiency (CCE) for alpha particles was studied. A strong dependence of the CCE on the ionized state of the arsenic antisite defect As/sub Ga//sup +/ and the resistivity determined from the Norde plot was observed. Also the influence of the compensation on the Schottky barrier height and space charge density can been seen.
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