Quantum well infrared photodetectors for long wavelength infrared imaging applications

S. Bandara, S. Gunapala, J.K. Liu, E. Luong, J. Mumolo, W. Hong, M. McKelvey
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引用次数: 1

Abstract

Long wavelength Quantum Well Infrared (QWIP) cameras developed at the Jet Laboratory demonstrate the potential of GaAs/Al/sub x/Ga/sub 1-x/As QWIP technology for highly sensitive, low power, low cost, and highly uniform large format (focal plane array (FPA)) imaging systems. These cameras utilize FPAs as large as 640/spl times/486 based on optimized GaAs/AlGaAs multiquantum-well (MQW) structures coupled with random or two dimensional periodic grating reflectors. Reported uniformities of these FPAs are better than 99.95% after two point correction has been reported. Other advantages of GaAs/AlGaAs based QWIPs are higher yield, durability, radiation hardness, and no 1/f noise till 30 mHz. In addition, QWIPs offer greater flexibility than usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored by varying layer thickness (wellwidth,) barrier composition (barrier height), and carrier density (well doping density). The GaAs/Al/sub x/Ga/sub 1-x/As material system allows the quantum well parameters to be varied over a range wide enough to enable light detection at any wavelength range between, 6-20 /spl mu/m. The spectral band width of these detectors can be tuned from narrow (/spl Delta//spl lambda///spl lambda//spl sim/10%) to wide (/spl Delta//spl lambda///spl lambda/ /spl sim/40%), allowing various applications. Also, QWIP device parameters can be optimized to achieve extremely high performance at lower operating temperatures (/spl sim/40 K) for low background, long-wavelength, infrared applications in the strategic arena as well as in astronomy.
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量子阱红外探测器的长波红外成像应用
Jet实验室开发的长波量子阱红外(QWIP)相机展示了GaAs/Al/sub x/Ga/sub 1-x/As QWIP技术在高灵敏度、低功耗、低成本和高度均匀的大画幅(焦平面阵列(FPA))成像系统中的潜力。这些相机利用基于优化的GaAs/AlGaAs多量子阱(MQW)结构的高达640/spl倍/486的fpga与随机或二维周期光栅反射器相结合。经两点校正后,这些fpa的一致性优于99.95%。基于GaAs/AlGaAs的qwip的其他优点是更高的良率,耐用性,辐射硬度,并且在30 mHz之前没有1/f噪声。此外,qwip比通常的外掺杂半导体红外探测器具有更大的灵活性,因为峰值响应和截止波长可以通过改变层厚度(井宽)、势垒组成(势垒高度)和载流子密度(井掺杂密度)来连续定制。GaAs/Al/sub x/Ga/sub 1-x/As材料系统允许量子阱参数在足够宽的范围内变化,以便在6-20 /spl mu/m之间的任何波长范围内进行光探测。这些探测器的光谱带宽可以从窄(/spl Delta//spl lambda///spl lambda//spl sim/10%)到宽(/spl Delta//spl lambda///spl lambda//spl sim/40%)进行调谐,允许各种应用。此外,QWIP器件参数可以优化,在较低工作温度(/spl sim/40 K)下实现极高的性能,适用于战略领域和天文学中的低背景、长波长、红外应用。
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