J. John, J. Kirchgessner, D. Morgan, J. Hildreth, M. Dawdy, R. Reuter, Hao Li
{"title":"Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology","authors":"J. John, J. Kirchgessner, D. Morgan, J. Hildreth, M. Dawdy, R. Reuter, Hao Li","doi":"10.1109/RFIC.2007.380946","DOIUrl":null,"url":null,"abstract":"A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.
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