Novel thermosetting low Dk/Df film and its performance

M. Koh, Kazuyoshi Yoneda, Kazutaka Nakada, Shoya Sekiguchi, Shoko Mishima, N. Ishikawa, T. Ogata
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Abstract

We have developed novel thermosetting low Dk/Df film for 5G application by using novel curable PPE. It showed low Dk, 3.1 at 10GHz, and low Df, 0.001 at 10GHz, high Tg, 200°C, low CTE, 18ppm and low water absorption 0.04%. And it showed good laser via process ability and good adhesion to Electroless plated Cu. We have made stacked substrate with L/S=15μm/15μm comb electrode and B-HAST test was conducted, and it showed good endurance. Transmission loss of the film was better than that of existing epoxy type low Df film.
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新型热固性低Dk/Df薄膜及其性能
我们利用新型可固化PPE开发了5G应用的新型热固性低Dk/Df薄膜。在10GHz时Dk低,为3.1,Df低,为0.001,Tg高,温度为200℃,CTE低,为18ppm,吸水率低,为0.04%。并表现出良好的激光通孔能力和与化学镀铜良好的附着力。我们制作了L/S=15μm/15μm梳子电极的堆叠衬底,并进行了B-HAST测试,其耐久性良好。该膜的传输损耗优于现有环氧型低Df膜。
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