{"title":"Device effect of low energy implantation in high density plasma","authors":"Hanming Wu, S. Lee, Xing Yu, Yong Liu, J. Chen","doi":"10.1109/IWJT.2004.1306752","DOIUrl":null,"url":null,"abstract":"In the present paper, high-density plasma implantation is proposed for shallow junction formation. The inevitable low energy component in ion energy distribution function (IEDF) has been studied by theoretical and numerical methods. Finally, the device effects induced by such a low energy component in IEDF in plasma implantation are analyzed and discussed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the present paper, high-density plasma implantation is proposed for shallow junction formation. The inevitable low energy component in ion energy distribution function (IEDF) has been studied by theoretical and numerical methods. Finally, the device effects induced by such a low energy component in IEDF in plasma implantation are analyzed and discussed.
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