Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors
{"title":"Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors","authors":"M. Tanabe, H. Shimamoto, T. Onai, K. Washio","doi":"10.1109/ICMTS.1995.513958","DOIUrl":null,"url":null,"abstract":"A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant one. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant one. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.
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