{"title":"A new extraction method for unit bipolar junction transistor capacitance parameters","authors":"N. Gambetta, B. Cialdella, D. Céli, M. Depey","doi":"10.1109/ICMTS.1995.513965","DOIUrl":null,"url":null,"abstract":"A new method for extracting the area, peripheral and corner capacitance components of bipolar junction transistor, using measurements versus bias on a number of different structures is presented and validated. The same model with different parameters is used for the three components. Validation has been made using a quasi-2D simulator. Finally, it is shown that this method gives accurate results regarding the goodness of fit.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new method for extracting the area, peripheral and corner capacitance components of bipolar junction transistor, using measurements versus bias on a number of different structures is presented and validated. The same model with different parameters is used for the three components. Validation has been made using a quasi-2D simulator. Finally, it is shown that this method gives accurate results regarding the goodness of fit.
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