J. Gambino, J. Wynne, S. Smith, S. Mongeon, P. Pokrinchak, D. Meatyard
{"title":"Effect of CoWP cap thickness on via yield and reliability for Cu interconnects with CoWP-only cap process","authors":"J. Gambino, J. Wynne, S. Smith, S. Mongeon, P. Pokrinchak, D. Meatyard","doi":"10.1109/IITC.2005.1499944","DOIUrl":null,"url":null,"abstract":"Via resistance and stress migration lifetime were characterized for a CoWP-only cap process (i.e. no dielectric cap) and a CoWP+SiN cap process. For the CoWP-only process, the via resistance and stress migration lifetime depended on the CoWP thickness. In order to achieve a tightly distributed via resistance and long stress migration lifetime, the data suggests that the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Via resistance and stress migration lifetime were characterized for a CoWP-only cap process (i.e. no dielectric cap) and a CoWP+SiN cap process. For the CoWP-only process, the via resistance and stress migration lifetime depended on the CoWP thickness. In order to achieve a tightly distributed via resistance and long stress migration lifetime, the data suggests that the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes.
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