Daeje Chin, Changhyun Kim, Y. Choi, D. Min, H. Hwang, Hoon Choi, S. Cho, T. Chung, C. Park, Y. Shin, Kwangpyuk Suh, Y. E. Park
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引用次数: 8
Abstract
In high-density DRAM'S, a large peak current of typically 200-300mA occurs when sense amplifiers start latching in a conventional scheme (Figure la), resulting in intolerable power bus noise. Four-phase drive for PMOS restoring was reported to reduce the pe& current by triggering four pull-up transistors successively.[l] The initial sensing operation by NMOS latches, however, is more critical to signal margjn and sensing speed.
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