Test structure design for a fast and simple evaluation of carrier mobilities in highly injected regions

G. Persiano
{"title":"Test structure design for a fast and simple evaluation of carrier mobilities in highly injected regions","authors":"G. Persiano","doi":"10.1109/ICMTS.1999.766224","DOIUrl":null,"url":null,"abstract":"This paper describes the use and the design of a microelectronic test structure to show a new fast and simple DC method for measuring the dependence of carrier mobilities upon carrier concentration. The test structure is designed for reducing parasitic effects and providing reliable results up to the highest carrier concentrations. Numerical simulation is used for verification of the accuracy of the method for several test structure parameters. Experimental results are provided and represented by a simple fitting formula.","PeriodicalId":273071,"journal":{"name":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1999.766224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper describes the use and the design of a microelectronic test structure to show a new fast and simple DC method for measuring the dependence of carrier mobilities upon carrier concentration. The test structure is designed for reducing parasitic effects and providing reliable results up to the highest carrier concentrations. Numerical simulation is used for verification of the accuracy of the method for several test structure parameters. Experimental results are provided and represented by a simple fitting formula.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
为快速、简单地评估高注入区域载流子机动性而设计的测试结构
本文描述了一个微电子测试结构的使用和设计,以展示一种新的快速和简单的直流方法来测量载流子迁移率随载流子浓度的依赖性。测试结构旨在减少寄生效应,并提供可靠的结果,直至最高载流子浓度。通过数值仿真验证了该方法对若干试验结构参数的准确性。给出了实验结果,并用一个简单的拟合公式表示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A compact SOI model for fully-depleted and partially-depleted 0.25 /spl mu/m SIMOX devices Inclusion of substrate effects in the flyback method for BJT resistance characterisation Sheet and line resistance of patterned SOI surface film CD reference materials as a function of substrate bias Analysis of current flow in mono-crystalline electrical linewidth structures A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1