Revised split C-V technique for mobility investigation in advanced devices

Abstract

In this paper we revise the split C-V technique widely used for mobility extraction. To extend its applicability we propose to use an integral of transconductance measured at high frequencies (HF) instead of the DC drain current. For the first time it is shown that such procedure allows not only to suppress parasitic gate-induced floating body effect (GIFBE), but also to improve the accuracy of mobility extraction in weak inversion (WI) regime. In this paper we apply our technique to partially-depleted (PD) SOI MOSFETs from a FinFET process and demonstrate its advantages in comparison to the standard method.