Dongyean Oh, Bonghoon Lee, Eunmee Kwon, Sangyong Kim, G. Cho, Sungkye Park, Seokkiu Lee, Sungjoo Hong
{"title":"TCAD Simulation of Data Retention Characteristics of Charge Trap Device for 3-D NAND Flash Memory","authors":"Dongyean Oh, Bonghoon Lee, Eunmee Kwon, Sangyong Kim, G. Cho, Sungkye Park, Seokkiu Lee, Sungjoo Hong","doi":"10.1109/IMW.2015.7150306","DOIUrl":null,"url":null,"abstract":"We have developed a reliable and predictable TCAD modeling method for retention characteristics of the charge trap NAND Flash device. This modeling method can explain various retention phenomena related to temperature, program pattern, and bake time. The temperature dependency is well described by direct tunneling and thermionic emission, the pattern dependency can be explained by carrier diffusion and the short time retention can be described by the electron-hole dynamics in the storage nitride layer.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"342 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
We have developed a reliable and predictable TCAD modeling method for retention characteristics of the charge trap NAND Flash device. This modeling method can explain various retention phenomena related to temperature, program pattern, and bake time. The temperature dependency is well described by direct tunneling and thermionic emission, the pattern dependency can be explained by carrier diffusion and the short time retention can be described by the electron-hole dynamics in the storage nitride layer.
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