Integrated flux concentrator improves CMOS magnetotransistors

M. Schneider, R. Castagnetti, M. Allen, H. Baltes
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引用次数: 19

Abstract

A magnetic microsystem based on CMOS technology merged with electroplating as a post-processing step is reported. The system makes use of a lateral dualcollector magnetotransistor with suppressed-sidewallinjection (SSIMT) and a highly permeable and soft magnetic microstructure of permalloy. This structure increases the magnetic flux density in the sensitive SSIMT region. It is deposited on top of the sensor chip using a CMOS compatible electroplating technique [ 11. The system sensitivity is increased by at least one order of magnitude over the conventional SSIMT.
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集成磁通集中器改进了CMOS磁晶体管
报道了一种基于CMOS技术与电镀相结合的磁微系统作为后处理步骤。该系统利用了具有抑制侧壁注入(SSIMT)的横向双集电极磁晶体管和高渗透性和软磁性的坡莫合金微观结构。这种结构增加了敏感SSIMT区的磁通密度。使用CMOS兼容的电镀技术将其沉积在传感器芯片的顶部[11]。系统灵敏度比传统的SSIMT提高了至少一个数量级。
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