{"title":"Highly producible monolithic Q-band MESFET VCO","authors":"S. Martin, Shirley A. Meyer, E. Reese, K. Salzman","doi":"10.1109/MCS.1992.185997","DOIUrl":null,"url":null,"abstract":"The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<>
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