X-ray exposure mask accuracy evaluation using electrical test structures

Abstract

An X-ray exposure mask was evaluated using electrical test structures. Linewidth was calculated from van der Pauw sheet resistivity and four-terminal bridge resistance. The four-terminal bridge gave a high resolution of 0.002 mu for 0.6- mu m patterns. It was confirmed that the electrical measurement has very high accuracy and reproducibility. A misalignment vector map was demonstrated by a pair o four-terminal bridges. The van der Pauw resistor was also applied for reducing batting error in electron-beam lithography.<>