Acoustic Metrology for Fine Pitch Microbumps in 3DIC

M. Mehendale, J. Chen, J. Dai, R. Mair, M. Kotelyanskii, P. Mukundhan, T. Murray
{"title":"Acoustic Metrology for Fine Pitch Microbumps in 3DIC","authors":"M. Mehendale, J. Chen, J. Dai, R. Mair, M. Kotelyanskii, P. Mukundhan, T. Murray","doi":"10.1109/ASMC.2019.8791757","DOIUrl":null,"url":null,"abstract":"The continuing shift to 3D integration requires formation of electrical interconnects between multiple vertically stacked Si devices to enable high speed, high bandwidth connections. Microbumps and through silicon vias (TSV) enable the high-density interconnects for die-to-die and die-to-wafer stacking for different applications. In this paper, we present acoustic metrology techniques for the measurement of multi-layer microbumps. One of the techniques, PULSE™ technology, is a very well-established mature solution for metal film thickness measurements. Repeatability and accuracy of the measurements more than adequately meets the process requirements. We also present a second nondestructive acoustic metrology for measuring taller copper pillars (> 30µm).","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The continuing shift to 3D integration requires formation of electrical interconnects between multiple vertically stacked Si devices to enable high speed, high bandwidth connections. Microbumps and through silicon vias (TSV) enable the high-density interconnects for die-to-die and die-to-wafer stacking for different applications. In this paper, we present acoustic metrology techniques for the measurement of multi-layer microbumps. One of the techniques, PULSE™ technology, is a very well-established mature solution for metal film thickness measurements. Repeatability and accuracy of the measurements more than adequately meets the process requirements. We also present a second nondestructive acoustic metrology for measuring taller copper pillars (> 30µm).
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3DIC中小间距微凸点的声学测量
向3D集成的持续转变需要在多个垂直堆叠的Si器件之间形成电气互连,以实现高速,高带宽的连接。微凸点和硅通孔(TSV)可实现高密度互连,用于不同应用的模对模和模对晶圆堆叠。本文提出了一种测量多层微凸点的声学测量技术。其中一项技术PULSE™技术是一种非常成熟的金属薄膜厚度测量解决方案。测量的重复性和准确性完全满足工艺要求。我们还提出了第二种无损声学测量方法,用于测量较高的铜柱(> 30µm)。
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