CMOS performance and density trends as we approach 0.1 /spl mu/m

T. Ning
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Abstract

The technology development required to sustain the CMOS performance and density trends near and beyond 0.1 /spl mu/m is examined. It is concluded that we are fast approaching the limits of scaling conventional (bulk) CMOS. We need to look beyond scaling bulk CMOS in order to sustain the rate of CMOS performance improvement.
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当我们接近0.1 /spl mu/m时,CMOS性能和密度趋势
研究了维持CMOS性能和密度趋势接近和超过0.1 /spl mu/m所需的技术发展。结论是,我们正在快速接近传统CMOS(体)的极限。为了维持CMOS性能提升的速度,我们需要超越规模化的CMOS。
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