Gallium oxide technologies and applications

Abstract

In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation > 600 V, low ohmic contact resistance < 0.2 Ω·mm, and RF power gain in the GHz regime. These results show great promise for monolithic and hybrid integration of RF amplifiers and switch technologies.