S. Samavedam, L. La, P. Tobin, B. White, C. Hobbs, L. Fonseca, A. Demkov, J. Schaeffer, E. Luckowski, A. Martínez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. García, S. Anderson, K. Moore, H. Tseng, C. Capasso, O. Adetutu, D. Gilmer, W. Taylor, R. Hegde, J. Grant
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引用次数: 25
Abstract
We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.
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