{"title":"GeO2/PZT resistive random access memory devices with Ni electrode","authors":"K. Chou, Chun‐Hu Cheng, A. Chin","doi":"10.1109/EDSSC.2013.6628194","DOIUrl":null,"url":null,"abstract":"We report a resistive random-access memory (RRAM) using stacked GeO<sub>2</sub> and PZT. Under unipolar mode operation, the Ni/GeO<sub>2</sub>/PZT/TaN RRAM shows a good DC cycling of 2×10<sup>3</sup> cycles, 85°C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO<sub>2</sub>.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85°C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.
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