High-frequency through-silicon Via (TSV) failure analysis

Joohee Kim, Jonghyun Cho, J. Pak, Joungho Kim, J. Yook, J. C. Kim
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引用次数: 17

Abstract

Despite the many advantages of 3D ICs, the yield loss experienced during the 3D IC fabrication process limits the commercialization of 3D IC products. In this study, we propose a novel method for TSV failure analysis and analyze TSV failures electrically to detect failures and their locations in TSV-based 3D IC.
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高频硅通孔(TSV)失效分析
尽管3D集成电路具有许多优点,但在3D集成电路制造过程中所经历的良率损失限制了3D集成电路产品的商业化。在本研究中,我们提出了一种新的TSV故障分析方法,并对TSV故障进行电气分析,以检测基于TSV的三维集成电路中的故障及其位置。
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