W. Xia, David Anderson, Felix Lin, Jonathan Cohrs, Shazad Paracha, D. Mahato, Eric Ellis
{"title":"Photoresist Lifting Induced Oxide Bridge Defects","authors":"W. Xia, David Anderson, Felix Lin, Jonathan Cohrs, Shazad Paracha, D. Mahato, Eric Ellis","doi":"10.1109/ASMC.2019.8791766","DOIUrl":null,"url":null,"abstract":"Oxide Bridge (OX BG) with wafer center signature was found in the back-end-of-line (BEOL) section of IC fabrication. The defect resembled lifted photoresist (PR) pattern and was uncovered to be related with the weak points at the scribe lines surrounding the active die area. The PR lifting OX BG was significantly reduced through optimizing the focus margin as well as fixing the weak points at the scribe lines.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Oxide Bridge (OX BG) with wafer center signature was found in the back-end-of-line (BEOL) section of IC fabrication. The defect resembled lifted photoresist (PR) pattern and was uncovered to be related with the weak points at the scribe lines surrounding the active die area. The PR lifting OX BG was significantly reduced through optimizing the focus margin as well as fixing the weak points at the scribe lines.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
