{"title":"Strained quantum well heterostructure: modeling and simulation of 980 nm","authors":"H. Mun, M. Muhamad","doi":"10.1109/SMELEC.2002.1217834","DOIUrl":null,"url":null,"abstract":"The work concerns the study of a 980-nm strained quantum well (QW) laser diode which is suitable for pumping Er/sup 3+/ doped fiber amplifiers. The concept of a strained QW in the design of the active layer of the laser diode is reviewed. A model of 980-nm strained multiple quantum-well (MQW) with InGaAs/GaAs active medium has been simulated. The simulation results include the comparison of optical gain between the transverse electric (TE) mode and transverse magnetic (TM) mode using carrier concentration as a parameter, the role of strain in QW and the field distribution across the direction of the epitaxial growth of heterostructure. Within the spectral range of 1.20-1.40 eV (wavelength 886-1034 nm), the results are reasonable and consistent with the basic principles employed in the optical properties of quantum well lasers.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The work concerns the study of a 980-nm strained quantum well (QW) laser diode which is suitable for pumping Er/sup 3+/ doped fiber amplifiers. The concept of a strained QW in the design of the active layer of the laser diode is reviewed. A model of 980-nm strained multiple quantum-well (MQW) with InGaAs/GaAs active medium has been simulated. The simulation results include the comparison of optical gain between the transverse electric (TE) mode and transverse magnetic (TM) mode using carrier concentration as a parameter, the role of strain in QW and the field distribution across the direction of the epitaxial growth of heterostructure. Within the spectral range of 1.20-1.40 eV (wavelength 886-1034 nm), the results are reasonable and consistent with the basic principles employed in the optical properties of quantum well lasers.
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