Chao Sun, Hiroki Fujii, K. Miyaji, K. Johguchi, K. Higuchi, K. Takeuchi
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引用次数: 9
Abstract
A 3D through-silicon-via (TSV)-integrated hybrid ReRAM/multi-level-cell (MLC) NAND solid-state drive's (SSD's) architecture is proposed with NAND-like interface (I/F) and sector-access overwrite policy for ReRAM. Furthermore, intelligent data management algorithms are proposed to suppress data fragmentation and excess usage of MLC NAND. As a result, 11-times performance increase, 6.9-times endurance enhancement and 93% write energy reduction are achieved. Both ReRAM write and read latency should be less than 3 μs to obtain these improvements. The required endurance for ReRAM is 105.