Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models

Abstract

Low-noise V-band two-stage amplifiers were fabricated using pseudomorphic MODFETs. They exhibited 10.5-dB gain and a 5.2-dB noise figure at 58.5 GHz, in very close agreement with results predicted in advance. The CAE models for the transistors and the passive coplanar waveguide (CPW) components were extracted from on-wafer S-parameter measurements up to 60 GHz and noise parameter measurements up to 18 GHz. For noise modeling of the MODFETs up to millimeter-wave frequencies, a novel approach based on the temperature-noise model reported by M.W. Pospiezalski (1989) was used. Very good agreement between simulated and measured monolithic microwave integrated circuit (MMIC) gain and noise performances was achieved up to the V-band by using these models.<>