On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

W. Liu, S. Cheng, H. Pan, S. Feng, K. Yu, J. Yan
{"title":"On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)","authors":"W. Liu, S. Cheng, H. Pan, S. Feng, K. Yu, J. Yan","doi":"10.1109/COMMAD.1998.791633","DOIUrl":null,"url":null,"abstract":"A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.
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AlInAs/GaInAs超晶格负差分电阻晶体管(SNDRT)的研究
成功制备了一种新型AlInAs/GaInAs超晶格负差分电阻开关(SNDRT)。采用5周期AlInAs/GaInAs超晶格服务于谐振隧道路线和少数载流子的约束势垒。实验结果表明,在所研究的SNDRT器件在室温下,在饱和和正向有源模式下,分别获得了一个有趣的三端控制n形多重负微分电阻(MNDR)现象和晶体管作用。认为n形MNDR主要是由5周期AlInAs/GaInAs超晶格内的共振隧穿引起的。
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