G. Han, S. Su, Lanxiang Wang, Wei Wang, X. Gong, Yue Yang, Ivana, P. Guo, Cheng Guo, Guangze Zhang, Jisheng Pan, Zheng Zhang, C. Xue, B. Cheng, Y. Yeo
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引用次数: 28
Abstract
In this paper, we report the world's first germanium-tin (GeSn) channel nMOSFETs. Highlights of process module advances are: low temperature (400 °C) process for forming high quality n+/p junction with high dopant activation and reduced dopant diffusion; interface engineering achieved with GeSnO2 interfacial layer (IL) between high-k gate dielectric and GeSn channel. A gate-last process was employed. The GeSn nMOSFET with GeSnO2 IL demonstrates a substantially improved SS in comparison with Ge control, and an ION/IOFF ratio of 104.
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