Photoluminescence and Raman characterization of excessive plasma etch damage of silicon

Abstract

Plasma processes have long been used in various stages of semiconductor device fabrication. Plasma enhanced chemical vapor deposition (PECVD) has been widely used as a low temperature silicon dioxide film deposition method in the semiconductor industry. [1,2] Various modes of plasma etching techniques also have been playing major roles in the silicon industry. Physical vapor deposition (PVD or sputtering), ion implantation, plasma ashing and plasma doping (PD) are a few examples of widely adapted plasma process techniques.