{"title":"A new device reliability evaluation method for overdrive voltage circuit application","authors":"Tao Cheng, M.Z. Lee, M. Yang","doi":"10.1109/RELPHY.2008.4559003","DOIUrl":null,"url":null,"abstract":"A new device reliability evaluation method is reported for the circuit application under voltage overdrive. Through an appropriate methodology shown in this paper, the 3.3V CMOS oxide reliability can be passed the specification and well characterized, even under 8V at drain side overdrive in some circuit application.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4559003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new device reliability evaluation method is reported for the circuit application under voltage overdrive. Through an appropriate methodology shown in this paper, the 3.3V CMOS oxide reliability can be passed the specification and well characterized, even under 8V at drain side overdrive in some circuit application.
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