P. Bolshakov, A. Khosravi, P. Zhao, R. Wallace, C. Young, P. Hurley
{"title":"Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time","authors":"P. Bolshakov, A. Khosravi, P. Zhao, R. Wallace, C. Young, P. Hurley","doi":"10.1109/ICMTS.2018.8383789","DOIUrl":null,"url":null,"abstract":"High-k encapsulated M0S2 field-effect-transistors were fabricated and electrically characterized. Comparison between HfO2 and AkO3 encapsulated MoS2 FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383789","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High-k encapsulated M0S2 field-effect-transistors were fabricated and electrically characterized. Comparison between HfO2 and AkO3 encapsulated MoS2 FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
