Demonstration of Generative Adversarial Network by Intrinsic Random Noises of Analog RRAM Devices

Yudeng Lin, Huaqiang Wu, B. Gao, Peng Yao, Wei Wu, Qingtian Zhang, Xiaodong Zhang, Xinyi Li, Fuhai Li, Jiwu Lu, Gezi Li, Shimeng Yu, H. Qian
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引用次数: 22

Abstract

For the first time, Generative Adversarial Network (GAN) is experimentally demonstrated on 1kb analog RRAM array. After online training, the network can generate different patterns of digital numbers. The intrinsic random noises of analog RRAM device are utilized as the input of the neural network to improve the diversity of the generated numbers. The impacts of read and write noises on the performance of GAN are analyzed. Optimized methodology is developed to mitigate the excessive noise effect on RRAM based GAN. This work proves that RRAM is suitable for the application of GAN. It also paves a new way to take advantage of the non-ideal effects of RRAM devices.
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基于模拟RRAM器件固有随机噪声的生成对抗网络论证
首次在1kb模拟随机存储器阵列上对生成对抗网络(GAN)进行了实验验证。经过在线训练,网络可以生成不同模式的数字数字。利用模拟随机存储器器件的固有随机噪声作为神经网络的输入,提高了所生成数字的多样性。分析了读写噪声对GAN性能的影响。提出了一种优化方法,以减轻基于RRAM的GAN的过度噪声影响。这一工作证明了RRAM适合GAN的应用。这也为利用RRAM器件的非理想效应开辟了一条新的途径。
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