{"title":"A 5.0mW 0dBm FSK transmitter for 315/433 MHz ISM applications in 0.25 /spl mu/m CMOS","authors":"N. Boom, Wim Rens, J. Crols","doi":"10.1109/ESSCIR.2004.1356652","DOIUrl":null,"url":null,"abstract":"An ultra-low power multi-channel narrowband FSK transmitter has been developed that operates in the 315/433 MHz bands for ISM applications and consumes only 5.0 mW at 1.3 V for an output power of 0 dBm. For an output power of -10 dBm the combination of the minimum power supply (0.9 V) and maximal data rate (100 kbps) leads to an energy consumption of less than 17 nJ/bit. The transmitter has a direct PLL modulation architecture using a /spl Delta//spl Sigma/ fractional-N synthesizer. The IC is implemented in a 0.25 /spl mu/m CMOS process and occupies 4.8 mm/sup 2/.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
An ultra-low power multi-channel narrowband FSK transmitter has been developed that operates in the 315/433 MHz bands for ISM applications and consumes only 5.0 mW at 1.3 V for an output power of 0 dBm. For an output power of -10 dBm the combination of the minimum power supply (0.9 V) and maximal data rate (100 kbps) leads to an energy consumption of less than 17 nJ/bit. The transmitter has a direct PLL modulation architecture using a /spl Delta//spl Sigma/ fractional-N synthesizer. The IC is implemented in a 0.25 /spl mu/m CMOS process and occupies 4.8 mm/sup 2/.