Improving the accuracy of numerically controlled sacrificial plasma oxidation using array of electrodes to improve the thickness uniformity of SOI

H. Takei, K. Yoshinaga, Y. Sano, S. Matsuyama, K. Yamauchi
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Abstract

The processing accuracy was improved by balancing out the wafer temperature using the cooling system and regulating the rf power by constantly measuring the electrode potential during processing.
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利用电极阵列提高数控牺牲等离子体氧化精度,改善SOI厚度均匀性
利用冷却系统平衡晶圆温度,在加工过程中通过不断测量电极电位来调节射频功率,提高了加工精度。
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