Advanced ioff measureable MOSFET array with eliminating leakage current of peripheral circuits

Abstract

A Novel Ioff measurable MOSFET array has been developed. Body bias of peripheral circuit is controlled in order to eliminate the unwanted leakage current in peripheral circuit. SPICE simulation results indicate 10-14A or less of Ioff can be measured, and it is demonstrated that around 10-12A of Ioff can be measured directly without any additional correction measurement. Since it can be fit into scribe line, Ion and Ioff can be measured with high accuracy for plenty of MOSFETs during mass production. In addition, MOSFET characteristics depending on various types of layout parameters will be able to extract efficiently.