Optimizing chemical bath deposition of cadmium sulfide for CuInGaSe based semi-transparent photovoltaics

Md. Mayrazul Hoque, Md. Zunaid Baten, Md. Abdullah Zubair, R. Sajjad
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引用次数: 1

Abstract

A novel application of thin-film photovoltaics is the Semi-Transparent Photovoltaics (STPV) for building integrated applications, where CuIn1−xGaxSe2 (CIGS) based solar cells can be a major candidate. To get the optimum efficiency for a given visible transparency, each layer in the thin-film stack needs to be optimized. In this paper, we optimize the cadmium sulfide (CdS) buffer layer for the CIGS based STPV using the chemical bath deposition technique. Several samples are deposited on clear glass and the highest visible transparency (71%) is found for the deposition time of 20 minutes, solution temperature of 80°C, stirring rate of 200 rpm and cadmium-sulfur reactant ratio of 1:10. The thickness measured from SEM micrograph is found to be 66 nm, which is the range of optimum thickness for this type of application.
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基于CuInGaSe的半透明光伏电池中硫化镉化学浴沉积的优化
薄膜光伏的一种新应用是用于建筑集成应用的半透明光伏(STPV),其中基于CuIn1−xGaxSe2 (CIGS)的太阳能电池可能是主要的候选材料。为了在给定的可见光透明度下获得最佳效率,需要对薄膜堆栈中的每一层进行优化。本文采用化学浴沉积技术对CIGS基STPV的硫化镉缓冲层进行了优化。将几个样品沉积在透明玻璃上,当沉积时间为20分钟,溶液温度为80°C,搅拌速度为200 rpm,镉硫反应物比为1:10时,发现最高的可见透明度(71%)。从SEM显微图测得的厚度为66 nm,这是该类型应用的最佳厚度范围。
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