High performance computing beyond 14nm node — Is there anything other than Si?

W. Haensch
{"title":"High performance computing beyond 14nm node — Is there anything other than Si?","authors":"W. Haensch","doi":"10.1109/ULIS.2012.6193350","DOIUrl":null,"url":null,"abstract":"Conventional CMOS scaling is rapidly coming to an end and the quest for solutions is in full swing how to meet the computational demands for the foreseeable future. Possible solutions are the change of device architecture and the introduction of high mobility materials for the devices. Beyond the classical device materials Si, Ge, and some III/V compounds carbon in the form of carbon nano tubes seems to provide an interesting alternative for digital applications.","PeriodicalId":350544,"journal":{"name":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2012.6193350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Conventional CMOS scaling is rapidly coming to an end and the quest for solutions is in full swing how to meet the computational demands for the foreseeable future. Possible solutions are the change of device architecture and the introduction of high mobility materials for the devices. Beyond the classical device materials Si, Ge, and some III/V compounds carbon in the form of carbon nano tubes seems to provide an interesting alternative for digital applications.
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超越14nm节点的高性能计算——除了Si之外还有什么?
传统的CMOS缩放正迅速走向终结,如何在可预见的未来满足计算需求的解决方案正在全面展开。可能的解决方案是改变设备架构和为设备引入高迁移率材料。除了经典的器件材料Si, Ge和一些III/V化合物之外,碳纳米管形式的碳似乎为数字应用提供了一个有趣的替代方案。
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