High-speed dielectric-planarized 850nm surface-emitting lasers with metal-plated heat sinks

A. N. Al-Omari, O. M. Khreis, A. Dagamseh, A. Ababneh, K. Lear
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引用次数: 1

Abstract

850-nm vertical-cavity laser diodes with copper-plated heat sinks were fabricated and tested. Vertical-cavity surface-emitting lasers with 10μm aperture diameter and 4μm of electroplated copper demonstrated a maximum −3dB modulation bandwidth of more than 16GHz and a resonance frequency of more than 11GHz at bias current of only 5.4mA, which correspond to a bias current density of only 7.5kA/cm2. Thus, reported devices exhibited a high −3dB modulation bandwidth squared over bias current density ratio of more than 35GHz2/kA/cm2. The displayed 7.5 kA/cm2 bias current density is less than the 10 kA/cm2 current density standard for reliability by 25%. Devices also demonstrate a reduced thermal resistance of 1.01 °C/mW, a threshold current of 1.1mA, a series resistance of only 60Ω, and a maximum output power density of about 1.2mW/cm2.
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高速介质平面化850纳米表面发射激光器,配有镀金属散热器
制备了850 nm镀铜散热器垂直腔激光二极管,并对其进行了测试。孔径为10μm、电镀铜厚度为4μm的垂直腔面发射激光器,在偏置电流仅为5.4mA时,最大- 3dB调制带宽大于16GHz,谐振频率大于11GHz,对应的偏置电流密度仅为7.5kA/cm2。因此,所报道的器件表现出高- 3dB调制带宽平方超过偏置电流密度比35GHz2/kA/cm2。显示的7.5 kA/cm2偏置电流密度比可靠性的10 kA/cm2电流密度标准低25%。器件的热阻降低到1.01°C/mW,阈值电流为1.1mA,串联电阻仅为60Ω,最大输出功率密度约为1.2mW/cm2。
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