{"title":"A new spin on electronics - spintronics","authors":"S. Wolf","doi":"10.1109/ISDRS.2003.1272106","DOIUrl":null,"url":null,"abstract":"This paper describes about the discovery of the giant magnetoresistance effect in magnetic multilayers in 1998 and the subsequent development of sensors based on it and the introduction of a new nonvolatile magnetic memory based on a spin dependent tunneling structure that potentially can be a universal replacement for existing semiconductor memories both volatile and nonvolatile. The development of the new field of spin electronics or spintronics is also discussed.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper describes about the discovery of the giant magnetoresistance effect in magnetic multilayers in 1998 and the subsequent development of sensors based on it and the introduction of a new nonvolatile magnetic memory based on a spin dependent tunneling structure that potentially can be a universal replacement for existing semiconductor memories both volatile and nonvolatile. The development of the new field of spin electronics or spintronics is also discussed.
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