A 25.6-GS/s 40-GHz 1-dB BW Current-Mode Track and Hold Circuit with more than 5-ENOB

Xuan-Quang Du, M. Grozing, M. Berroth
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引用次数: 9

Abstract

A majority of HBT-based track and hold circuits (T/H) with more than 10 GS/s use switched emitter followers (SEFs) as their primary sampling element. The SEFs enable high sampling rates and high analog tracking bandwidths. At high input frequencies, however, they suffer from strong linearity degradations due to base-emitter modulation, signal feedthrough and clock jitter. To address these issues, this work presents a current-mode T/H based on charge sampling. The T/H is implemented in a 130 nm SiGe BiCMOS technology and achieves more than 5 ENOB and more than 33 dBc SFDR up to the 2nd Nyquist frequency at 25.6 GS/s. Time-domain measurements for a 40 GHz input signal are also presented, in which an ENOB of 5.8 and SFDR of 44.6 dBc are achieved.
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25.6-GS/s 40-GHz 1-dB BW电流模式跟踪和保持电路,超过5-ENOB
大多数超过10gs /s的基于hbt的跟踪和保持电路(T/H)使用开关发射极跟随器(SEFs)作为其主要采样元件。sef支持高采样率和高模拟跟踪带宽。然而,在高输入频率下,由于基极-发射极调制、信号馈通和时钟抖动,它们遭受强烈的线性退化。为了解决这些问题,本工作提出了基于电荷采样的电流模式T/H。T/H采用130 nm SiGe BiCMOS技术实现,在25.6 GS/s的第2奈奎斯特频率下实现超过5 ENOB和超过33 dBc的SFDR。给出了40ghz输入信号的时域测量结果,其ENOB为5.8,SFDR为44.6 dBc。
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