A novel memory cell architecture for high-density DRAMs

Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI:10.1109/VLSIC.1989.1037509

Y. Ohta, T. Mimoto, Y. Torimaru, R. Miyake

引用次数: 7

Abstract

when the CBlCS ratio ia grsatar than 1. AV1 in 121 i s larger than the mnventiond AV, in (11. The CBCS ratio is about LO in praelioe. For the mndition AV* AV, the new cell -raga fapaeitanes is snavgh to be abovt 314 that af the mnvintianal cell ( see Fig.2 1 . Thus the density of the FEC cell b-m~a~ullygrraterthenthatafthc2-alsmentcel l . thatisfactorof 1.6( m T a b l e 1 ).ThismaksstheFECcellsvlfableforhighd~ruityDRAM~.

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一种新的高密度dram存储单元结构

当CBlCS比大于1时。在121中AV1比在11中AV1大。预估CBCS比率约为LO。在AV* AV条件下，新细胞-raga fapaeitanes比环境细胞高314以上(见图2 1)。因此，FEC电池的密度b-m~a~大大大于2- al2o3电池的密度。这使得fecs电池适用于高分辨率的dram ~。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Symposium 1989 on VLSI Circuits

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