Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN/GaN HFETs

Abstract

In the present abstract the non-linearity and power performance of AlGaN/GaN HFETs upon varying thickness and Al-mole fraction of the barrier AlGaN layer is presented. The present calculation is based upon the determination of the 2DEG concentration by solving Schrodinger and Poisson's equations self-consistently as well as incorporating non-stationary transport to obtain the carrier velocity-electric field characteristics. Charge control is obtained by accounting for the total polarization in the barrier AlGaN layer and the GaN layer at the heterointerface. Device nonlinearity has been analyzed using Volterra Series technique which shows the output referred third-order intercept point (OIP3), referred as the output power level at which third-order intermodulation component of the output power crosses the fundamental component. the third-order intermodulation is also achieved at higher barrier thickness. A higher IM3 is also achieved at higher Al-mole fraction.