Reevaluating the latency claims of 3D stacked memories

Abstract

In recent years, 3D technology has been a popular area of study that has allowed researchers to explore a number of novel computer architectures. One of the more popular topics is that of integrating 3D main memory dies below the computing die and connecting them with through-silicon vias (TSVs). This is assumed to reduce off-chip main memory access latencies by roughly 45% to 60%. Our detailed circuit-level models, however, demonstrate that this latency reduction from the TSVs is significantly less. In this paper, we present these models, compare 2D and 3D main memory latencies, and show that the reduction in latency from using 3D main memory to be no more than 2.4 ns. We also show that although the wider I/O bus width enabled by using TSVs increases performance, it may do so with an increase in power consumption. Although TSVs consume less power per bit transfer than off-chip metal interconnects (11.2 times less power per bit transfer), TSVs typically use considerably more bits and may result in a net increase in power due to the large number of bits in the memory I/O bus. Our analysis shows that although a 3D memory hierarchy exploiting a wider memory bus can increase performance, this performance increase may not justify the net increase in power consumption.