Y. Tomomatsu, E. Suekawa, T. Enjyoji, M. Takeda, H. Kondoh, H. Hagino, T. Yamada
{"title":"An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dIrr/dt condition","authors":"Y. Tomomatsu, E. Suekawa, T. Enjyoji, M. Takeda, H. Kondoh, H. Hagino, T. Yamada","doi":"10.1109/ISPSD.1996.509514","DOIUrl":null,"url":null,"abstract":"Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of local heating resulted in a design principle for improving destruction immunity of the diode. Diodes designed according to the present principle showed excellent destruction immunity under high dIrr/dt condition.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
Abstract
Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of local heating resulted in a design principle for improving destruction immunity of the diode. Diodes designed according to the present principle showed excellent destruction immunity under high dIrr/dt condition.
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